Comparison of Se and Te clusters produced by ion bombardment
نویسندگان
چکیده
منابع مشابه
Surface Defects and Bulk Defect Migration Produced by Ion Bombardment of Si(001)
Variable-temperature scanning tunneling microscopy is used to characterize surface defects created by 4.5 keV He ion bombardment of Si(001) at 80–294 K; surface defects are created directly by ion bombardment and by diffusion of bulk defects to the surface. The heights and areal densities of adatoms, dimers, and adatom clusters at 80 and 130 K are approximately independent of temperature and in...
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ژورنال
عنوان ژورنال: EPJ Web of Conferences
سال: 2016
ISSN: 2100-014X
DOI: 10.1051/epjconf/201713302004